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4 edition of The study of defects in low misfit Ge-Si strained layer heterostructures found in the catalog.

The study of defects in low misfit Ge-Si strained layer heterostructures

Mark Benedetto Stirpe

The study of defects in low misfit Ge-Si strained layer heterostructures

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Published by National Library of Canada in Ottawa .
Written in English


Edition Notes

Thesis (M.Sc.) -- University of Toronto, 1998.

SeriesCanadian theses = -- Thèses canadiennes
The Physical Object
FormatMicroform
Pagination1 microfiche : negative. --
ID Numbers
Open LibraryOL19151423M
ISBN 100612341526
OCLC/WorldCa46574085

  The basic principles (including the derivation of equations and ()) and applications of thermoelectrics have been thoroughly discussed in a number of books and review articles over the past six decades (the list is too large to include here, but for a few non-biased books see: in the s [], in the s [2–4], in the s [], in the s [6–9], and similarly for a few non-biased Cited by: This banner text can have markup.. web; books; video; audio; software; images; Toggle navigation. Yanguang Zhou, Xiaojing Gong, Ben Xu and Ming Hu, First-principles and molecular dynamics study of thermoelectric transport properties of N-type silicon-based superlattice-nanocrystalline heterostructures, Journal of Applied Physics, /, , 8, (), ().Cited by: Later, another team employed Ge-Si Ge quantum wells in surface-illuminated modulators to red-shift the operating wavelength to ∼ μm []. More recently, GeSi, i.e., Ge epitaxial layer comprising 1% of silicon, has been used to exhibit strong FKE around μm and demonstrate EA modulators with 10 dB extinction ratio [].Author: Sasan Fathpour.


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The study of defects in low misfit Ge-Si strained layer heterostructures by Mark Benedetto Stirpe Download PDF EPUB FB2

Initial stages of misfit relaxation process in Ge epitaxial films grown in two-dimensional (layer-by-layer) mode on Si() have been investigated by high-resolution transmission electron microscopy. Heterostructures and superlattices based on Si, Ge, and their solid solutions have recently generated much interest for application in electronic devices [1].Cited by: 3.

It is well known that a cross-hatch develops on the surface of low-misfit strained semiconductor layers which undergo relaxation by the introduction of arrays of a2〈〉 misfit dislocations in. The intermediate sacrificial strained SiGe layer, whose thickness is less than the critical layer thickness (CLT) for the given Ge mole fraction and temperature of growth, transfers the lattice continuity from the bulk Si to the top Si channel region.

The SiGe layer is then selectively removed so that the Si cap layer remains suspended over an. These strained heterostructures and strained-layer superlattices (SLSs) have increased the complexity and diversity of structures that can be used in fundamental materials studies and device design.

This article will briefly review the growth techniques used to prepare these types of strained heterostructures with emphasis on the use of MOCVD. The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods.

The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge by: We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing.

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and. @article{osti_, title = {Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures}, author = {Kovalskiy, V.

A., E-mail: [email protected] and Vergeles, P. and Eremenko, V. and Fokin, D. and Dorokhin, M. and Danilov, Yu. and Zvonkov, B. N.}, abstractNote = {An approach for understanding the origin of cross-hatch pattern (CHP) on the. Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials.

In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO3 (LSM), a model perovskite oxide that serves in energy conversion technologies.

LSM epitaxial thin films with thicknesses ranging from 10 nm to more than Cited by: On the development of misfit dislocation distributions in strained epitaxial layer interfaces. Scripta Met & Mat, 33(1), The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy (Journal article).

Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits.

But in spite of Cited by: 7. The term SK growth is now typically used in lattice-mismatched heteroepitaxy for the island formation (and related relaxation of strain energy, cmp.

Fig. ) on an initially two-dimensional layer (wetting layer). 2 Also growth of islands relaxed by misfit dislocations in strained heteroepitaxy has been termed SK growth []. In the opposite case, in a tensile strained Si layer on () Ge, the 90° partial nucleates first at lower shear stress compared to the nucleation of the 30° one of the compressive strain case.

That is why the 30° partial dislocation cannot follow immediately (indicated by the dashed vector in Figure 1 b) for the tensile strain case, leading Author: Heiko Groiss. Band Offsets for InAs 1-x Sb x /InAs 1-y Sb y Strained Layer Superlattices Derived from Interband Magneto-optical Studies.

Strain-Stabilized Si-C Alloy Layers Containing 20% Carbon Embedded Pseudomorphically in Si. Dependence on the In Concentration of the Piezoelectric Constant in ()B InGaAs/GaAs Strained Heterostructures. This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS fabricated strained Ge microstripes using high resolution x-ray micro-diffraction.

The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10 5 (Da. Boosting Hole Mobility in Coherently Strained []-Oriented Ge–Si Core–Shell NanowiresCited by: 2.

Growth process of HgCdTe/Si() heterostructures. HgCdTe/Si() heterostructures were grown using the multichamber ultrahigh vacuum MBE installation “Ob’” [Sidorov et al., ].For in situ monitoring of preepitaxial preparation and growth, we used reflection high-energy electron diffraction (RHEED) and single-wave ellipsometry at wavelength λ = : Maxim Yakushev, Vasily.

Varavin, Vladimir Vasilyev, Sergey Dvoretsky, Yuri. Sidorov Irina Sabinina. Village Theme is a free CSS template provided by me. Year “Cardiac fibroblasts adopt osteogenic cell fates and contribute to pathologic heart calcification”, Indulekha C.L.

Pillai, Shen Li, Milagros Romay, Larry Lam, Yan Lu, Jie Huang, Nathaniel Dillard, Marketa Zemanova, Liudmilla Rubbi, Yibin Wang, Jason Lee, Ming Xia, Owen Liang, Ya-Hong Xie, Matteo Pellegrini, Aldons J. Local electrical characterizations of GaAs/Si microscale islands.

It should be noted that the SiO 2 layer between the GaAs/Si interface has a thickness of around nm for ()Si, and of nm for ()Si. Tanabe et al. have previously shown that GaAs directly bonded on Si substrate through an amorphous layer up to 2 nm thick can lead to a highly conductive heterojunction by: 7.

The structural analysis of GaN and AlxGa1–xN/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of AlxGa1–xN on GaN.

Moreover, the doping with Mn promotes the formation of layered AlxGa1–xN/GaN superlattice-like Cited by: 6. Surface morphological response to mismatch strain in strained-layer heterostructures also is analyzed. Our research focuses on the surface morphological evolution and stability of electrically conducting (metallic, such as Cu) and semiconducting (such as Si) solids under the simultaneous application of mechanical stresses, electric fields, and.

NANO-SCALE CHEMISTRY OF SELF-ASSEMBLED NANOSTRUCTURES IN EPITAXIAL SiGe GROWTH, Prabhu Balasubramanian, Jerrold A. Floro, Jennifer L. Gray and Robert Hull, J. Cryst. Growth(). On the way to integrate lattice mismatched semiconductors on Si(), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si.

Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) by: 5.

This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-T c superconductors.

You can write a book review and share your experiences. Other readers will always be interested in your opinion of the books you've read. Whether you've loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them.

In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields.

However, the integration of III–V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge Cited by: 2. Strained-layer epitaxy exhibits a rich variety of interesting phenomena reflecting the interplay between surface energy and misfit stress.

Utilizing Atomic Force Microscopy and Scanning Transmission Electron Microscopy, we have studied the annealing of SiGe/Si() thin films. SiGe heterostructures with higher Ge fractions and larger Ge modulations, and thus higher compressive stress, are key structures for next-generation electronic and optoelectronic devices.

Si-Ge interdiffusion during high temperature growth or fabrication steps changes the distribution of Ge fraction and stress, and increases atomic intermixing, which degrades device performance. It is of. Scholarly book chapters. Sgarlata, Luca Persichetti, and A. Balzarotti, “Semiconductor quantum dots: Model case Ge/Si” in Wiley book on “Surface and Interface Science” Vol.

4, Chap. 29 (). Patrick McNallyresearchLorem ipsum dolor sit amet, consectetur adipiscing elit, sed do eiusmod tempor incididunt ut labore et dolore magna aliqua. Ut enim ad minim veniam, quis nostrud exercitation ullamco laboris nisi ut aliquip ex ea commodo consequat.

Duis aute irure dolor in reprehenderit in voluptate velit esse cillum dolore eu fugiat nulla pariatur. Alternative GaAs-on-Si substrates have a considerable market potential for replacing the costly GaAs substrate in producing traditional GaAs-based devices such as solar cells, photodetectors, LEDS, lasers, and microwave devices, and as a new technology for monolithic integration of GaAs elements and Si integrated circuits 1,2,3,4,5,6, first step toward this goal is to obtain high quality Cited by: 7.

KINETICS OF STRAIN RELAXATION THROUGH MISFIT DISLOCATION FORMATION IN LAYER-BY-LAYER SEMICONDUCTOR HETEROEPITAXY. Dimitrios Maroudas, Luis A. Zepeda-Ruiz, Brett Z. Nosho, Rodney I. Pelzel, and W. Henry Weinberg, Department of Chemical Engineering, University of California, Santa Barbara, CA.

C MISFIT DISLOCATION NUCLEATION IN THIN FILMS. You can write a book review and share your experiences. Other readers will always be interested in your opinion of the books you've read.

Whether you've loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them. Free ebooks since The subsequent deposition of a thin Ge cap layer induced the incorporation of the Sn atoms segregated on the surface in a thin layer wetting the nano dots surface with 8± at% Sn.

The presence of this wetting layer is associated with a relatively strong photoluminescence emission that we attribute to the direct recombination occurring in the. Proc. SPIESilicon-based Optoelectronics, pg 2 (19 March ); doi: / Study of Structure and Quality of Different Silicon Oxides by using FTIR Spectroscopy in, Book of Pre-Prints of the 4th International Conference on Materials for Microelectronics and Nanoengineering, June Helsinki, Finland, London SW1Y 5DB, UK, Published by IOM Communications Ltd,pp -[T.S.

Perova, C. Moore, I.I. The surface of a film grown epitaxially on a crystalline substrate is generally rough, even if the initial growth surface is smooth on the atomic scale.

In the case of strained-layer epitaxy, in which the composition of the film is such that it does not share the same lattice constant as the substrate, the roughness often develops in response to strain-relief processes occurring in> the film.

of these oxide heterostructures made possible by a direct ultra-high vacuum connection between MBE and ARPES [2]. is of both high purity and high concentration. Additionally, ozone has [1] R. Ramesh and D.G. Schlom, “Creating Emergent Phenomena in Oxide Superlattices,” Nature Reviews Materials 4.

"Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe 2-x films" Y. Fan, H. Li1, M. DC, T. Peterson, J. Held, P. Sahu, J. Chen. [] (1) Study of the formation, evolution and dissolution of interfacial defects in silicon wafer bonding S.

Vincent, J. D. Penot, I. Radu, F. Letertre, and F. Rieutord, J. Appl. Phys. () [] (1) Influence of the U 3 O 7 domain structure on cracking during the oxidation of UO 2.Polarity-Driven QuasiFold Composition Symmetry of Self-Catalyzed III–V–V Ternary Core–Shell NanowiresCited by: Proc.

SPIEAdvanced Processing of Semiconductor Devices, pg 2 (22 April ); doi: /